師資
主要工作業(yè)績(jī)：
長(zhǎng)期從事半導(dǎo)體相關(guān)的研究工作，包括InP,GaAs,ZnSe,ZnO等。2006回國(guó)以來(lái)主要進(jìn)行第三代半導(dǎo)體GaN材料與器件研究，特別是藍(lán)綠光垂直腔面發(fā)射激光器（VCSEL）等，是大陸唯一研制出該器件的課題組負(fù)責(zé)人，并且在綠色VCSEL方面處于國(guó)際先進(jìn)水平。采用量子點(diǎn)，將該器件的發(fā)光波長(zhǎng)從國(guó)際上報(bào)道的503 nm延伸到了565 nm，并實(shí)現(xiàn)了室溫連續(xù)激射，閾值電流達(dá)到國(guó)際最好；發(fā)明了利用藍(lán)光量子阱中局域態(tài)和諧振腔模式相耦合，實(shí)現(xiàn)綠光VCSEL的新方法；首次在InGaN量子阱中實(shí)現(xiàn)了激子極化激元的室溫激射;首次實(shí)現(xiàn)深紫外波段VCSEL(276 nm)。
至今發(fā)表論文200余篇，授權(quán)發(fā)明專利20余項(xiàng)。
教育經(jīng)歷：
1979.09—1983.07 蘭州大學(xué)物理系半導(dǎo)體專業(yè)學(xué)習(xí)，獲理學(xué)學(xué)士學(xué)位
1983.09—1986.02 河北半導(dǎo)體研究所（中國(guó)電子科技集團(tuán)第十三研究所）半導(dǎo)體物理與器件專業(yè)研究生學(xué)習(xí)，獲工學(xué)碩士學(xué)位
1989.04—1990.03 日本東京大學(xué)進(jìn)修學(xué)習(xí)
1990.04—1994.06 日本東京大學(xué)研究生院工學(xué)系研究科應(yīng)用物理專業(yè)研究生學(xué)習(xí)，獲工學(xué)博士學(xué)位
工作經(jīng)歷：
1986.03—1989.03 河北半導(dǎo)體研究所（中國(guó)電子科技集團(tuán)第十三研究所）
1994.07—1998.03 日本理化學(xué)研究所研究員
1998.03—1999.03 日本夏普株式會(huì)社電子器件研究所主任
1999.04—2005.03 日本理化學(xué)研究所研究員
2005.04—2005.12 日本科學(xué)技術(shù)振興機(jī)構(gòu)研究員；理化學(xué)研究所研究員
2006.01—2008.07 廈門大學(xué)物理與機(jī)電工程學(xué)院，閩江學(xué)者特聘教授(博導(dǎo))
2008.07—2011.08 廈門大學(xué)薩本棟微機(jī)電研究中心副主任；物理與機(jī)電工程學(xué)院，閩江學(xué)者特聘教授
2011.08—2013.01 廈門大學(xué)物理與機(jī)電工程學(xué)院，閩江學(xué)者特聘教授
2013.01—2013.02 廈門大學(xué)信息科學(xué)與技術(shù)學(xué)院，閩江學(xué)者特聘教授
2013.02—2017.09 廈門大學(xué)信息科學(xué)與技術(shù)學(xué)院電子工程系主任，閩江學(xué)者特聘教授
2017.09—2023.12.26 廈門大學(xué)電子科學(xué)與技術(shù)學(xué)院（國(guó)家示范性微電子學(xué)院）副院長(zhǎng)、閩江學(xué)者特聘教授
2023.12.28—至今 南方科技大學(xué)工學(xué)院納米科學(xué)與應(yīng)用研究院
在研項(xiàng)目（主持）：
國(guó)家基金委重點(diǎn)項(xiàng)目（GaN基紫外VCSEl關(guān)鍵技術(shù)研究，2023.01-2027.12）
國(guó)家基金委聯(lián)合基金項(xiàng)目（GaN基綠光VCSEL研究，2022.01-2025.12）
聯(lián)合實(shí)驗(yàn)室項(xiàng)目（南方科技大學(xué)納米科學(xué)與應(yīng)用研究院-江西德瑞光電技術(shù)有限公司 先進(jìn)光電器件及應(yīng)用聯(lián)合實(shí)驗(yàn)室，2024.08-2029.07）
已結(jié)題項(xiàng)目（主持）：
國(guó)家863項(xiàng)目
國(guó)家重點(diǎn)研發(fā)計(jì)劃項(xiàng)目
國(guó)家基金委聯(lián)合基金項(xiàng)目（2016.01-2019.12）
國(guó)家基金委面上項(xiàng)目（共計(jì)4項(xiàng)）
國(guó)家科工局基礎(chǔ)科學(xué)挑戰(zhàn)專題項(xiàng)目
廈門市科技項(xiàng)目
榮譽(yù)、受賞、社會(huì)兼職：
福建省自然科學(xué)三等獎(jiǎng)
廣東省科技進(jìn)步二等獎(jiǎng)
入選愛思唯爾（Elsevier）社發(fā)布的2014~2024年中國(guó)高被引學(xué)者榜單
福建省閩江學(xué)者特聘教授
福建省高層次A類人才
四川省千人計(jì)劃
廈門大學(xué)南強(qiáng)重點(diǎn)崗位教授
鵬城孔雀計(jì)劃特聘崗位A檔
任SCI收錄雜志Semiconductor Science and Technology 副主編(Executive editor),Nano-Micro Letters和EI收錄《發(fā)光學(xué)報(bào)》編委。
教育部 “紫外光發(fā)射材料與技術(shù)”和“發(fā)光與光信息技術(shù)”重點(diǎn)實(shí)驗(yàn)室學(xué)術(shù)委員會(huì)成員。
氮化物半導(dǎo)體領(lǐng)域國(guó)際會(huì)議ICNS (International Conference on Nitride Semiconductors), IWN (International Workshop on Nitride Semiconductors) and APWS (Asia-Pacific Workshop on Widegap Semiconductors)程序委員會(huì)成員。
曾任第十二屆廈門市政協(xié)委員。
發(fā)表論文（摘錄）：
1. W. Ou, Y. Mei, H. Long, Y. K. Wang, T. Yang, Y. H. Chen, L. Y. Ying, Z. M. Zheng and B. P. Zhang, "Orthogonally and linearly polarized green emission from a semipolar InGaN based microcavity" Nanophotonics, 13(2023): 75-83.
2. T. Yang, Y. H. Chen, Y. C. Wang, W. Ou, L. Y. Ying, Y. Mei, A. Q. Tian, J. P. Liu, H. C. Guo and B. P. Zhang, "Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity", Nano-Micro Letters, 15(2023): 223.
3. X. Hou, T. Yang, S. S. Fan, H. Xu, D. Lida, Y. J. Liu, Y. Mei, G. E. Weng, S. Q. Chen, Weng,B. P. Zhang and K. Ohkawa, "Optical properties of InGaN-based red multiple quantum wells", Applied physics letters, 26(2022): 120.
4. Z. M. Zheng, Y. K. Wang, J. Hoo, S. P. Guo, Y. Mei, H. Long, L. Y. Ying, Z. W. Zheng and B. P. Zhang* “High-quality AlGaN epitaxial structures and realization of UVC vertical cavity surface-emitting lasers”, SCIENCE CHINA Materials, 66（2023）1978-1988.
5. Z. L. Lin, Y. Man, Z. Y. Lv, B. P. Zhang, H. Xu, D. Q. Yu, X. C. Yang, Y. He, X. W. Shi, L. Y. Ying and D. Zhang*, "High-Gain of NdIII Complex Doped Optical Waveguide Amplifiers at 1.06 and 1.31 μm Wavelengths Based on Intramolecular Energy Transfer Mechanism", Advanced Materials, 35(2023):2209239.
6. M.Yuan, M. K. Zhang, Z. Fu, S. Han, Y. N. Zhang, S. X.Wu, R. D. Hong, X. P. Chen, B. P. Zhang, J. Chen Wang and F. Zhang, "Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on Al Nanoparticle in 4H-SiC Microholes", ACS Appl. Nano Mater, 6(2023) :11.
7. Y. Mei, M. C. Xie, T. Yang, X. Hou, W. Ou, H. Long, L. Y. Ying, Y. J. Liu, G. E. Weng, S. Q. Chen and B. P. Zhang, “Improvement of the Emission Intensity of GaN-Based Micro-Light Emitting Diodes by a Suspended Structure”, ACS Photonics 2022, 9, 3967?3973.
8. Y. Mei, M. C. Xie, H. Long, L. Y. Ying, B. P. Zhang, "Low threshold GaN-based microdisk lasers on Silicon with high Q factor", J. Lightwave Technology, 40.9 (2022): 2952-2958.
9. （特邀）王玉坤，鄭重明，龍浩，梅洋，張保平，“氮化物垂直腔面發(fā)射激光器的發(fā)展與挑戰(zhàn)”， 光子學(xué)報(bào)，51.2 (2022): 0251203.
10. S. Yang, H. Xu, H. Long, L. Y. Ying, R. H. Luo, M. J. Zhong, W. R. Lu, X. Hou, Y. Mei, B. P. Zhang, "GaN-Based Green Resonant-Cavity Light-Emitting Diodes with Al mirror and copper plate ", Optics Letters, 47.11 (2022): 2858-2861.
11. W. Ou, Y. Mei, Daisuke Iida, H. Xu, M. C. Xie, Y. W. Wang, L. Y. Ying, B. P. Zhang, Kazuhiro Ohkawa, "InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes"，J. Lightwave Technology, 40.13 (2022): 4337-4343.
12. X. Hou, S. S. Fan, H. Xu, Daisuke Iida, Y. J. Liu, Y. Mei, G. E. Weng, S. Q. Chen B. P. Zhang, K. Ohkawa, "Optical properties of InGaN-based red multiple quantum wells", Applied Physics Letters, 120.26 (2022): 261102.
13. Y. Mei, Y. H. Chen, L.Y. Ying, A. Q. Tian, G. E. Weng, H. Long, J. P. Liu and B. P. Zhang, "Dual-wavelength switching in InGaN quantum dot micro-cavity light-emitting diodes", Optics Express, 30.15 (2022): 27472-27481.
14. X. R. Luo, B. P. Zhang, Y. H. Lu, Y. Mei and L. Shen, "Advances in application of ultraviolet irradiation for biofilm control in water and wastewater infrastructure", Journal of Hazardous Materials, 421 (2022): 126682.
15. Y. Mei, Y. H. Chen, L. Y. Ying, Z. W. Zheng, H. Long, B. P. Zhang, "High Q factor Electrically Injected Green Micro Cavity", J. Lightwave Technology, 39.9 (2021): 2895-2900.
16. Z. M. Zheng, Y. Mei, H. Long, H. Jason, S. P. Guo, Q. X. Li, L.Y. Ying, Z. W. Zheng and B. P. Zhang, "AlGaN-based deep ultraviolet vertical cavity surface emitting laser", IEEE Electron Device Letters, 42.3 (2021): 375-378.
17. Y. Mei, T. R. Yang, W. Ou, Z. M. Zheng, H. Long, L. Y. Ying, B. P. Zhang, "Low-threshold wavelength-tunable ultraviolet vertical-cavity surface-emitting lasers from 376 to 409 nm", Fundamental Research, 1.6 (2021): 684-690.
18. X. Hou, S. S. Fan, D. Iida, Y. Mei, B. P. Zhang*, K. Ohkawa, "Photoluminescence of InGaN-based red multiple quantum wells", Optics Express, 29.19 (2021): 30237-30243.
19. J. Z. Wu, H. Long*, X. L. Shi, S. Luo, Z. H. Chen, Z. C. Feng, L. Y. Ying, Z. W. Zheng and B. P. Zhang, "Polariton lasing in InGaN quantum wells at room temperature", Opto-Electron Adv, 2.12 (2019): 190014-1.
20. (Invited) Y. Mei, R. B. Xu, L. Y. Ying, J. P. Liu, Z.W. Zheng, H. Long, B. P. Zhang, "Room temperature continuous wave lasing of GaN-based green vertical-cavity surface-emitting lasers", Gallium Nitride Materials and Devices XIV, 10918 (2019): 109181H; SPIE OPTO, 2019, San Francisco, California, United States
21. P. O. Nyangaresi, Y. Qin, G. L. Chen, B. P. Zhang, Y. H. Lu, and L. Shen "Comparison of the performance of pulsed and continuous UVC-LED irradiation in the inactivation of bacteria”, Water Research, 157 (2019): 218-227.
22. P. O. Nyangaresi, Y. Qin, G. L. Chen, B. P. Zhang, Y. H. Lu, and L. Shen, "Effects of single and combined UV-LEDs on inactivation and subsequent reactivation of E. coli in water disinfection", Water Research, 147 (2018): 331-341.
23. (REVIEW) H. C. Yu, Z. W. Zheng, Y. Mei, R. B. Xu, J. P. Liu, H. Yang, B. P. Zhang, T. C. Lu, and H. C. Kuo, "Progress and prospects of GaN-based VCSEL from near UV to green emission", Progress in Quantum Electronics, 57 (2018): 1–19.
24. Y. Mei, G. E. Weng, B. P. Zhang, J. P. Liu, W. Hofmann, L. Y. Ying, J. Y. Zhang, Z. C. Li, H. Yang and H. C. Kuo, "Quantum dot vertical-cavity surface-emitting lasers covering the “green gap”", Light: Science & Applications. 6.1 (2017): e16199.